JPH0415938B2 - - Google Patents
Info
- Publication number
- JPH0415938B2 JPH0415938B2 JP55086801A JP8680180A JPH0415938B2 JP H0415938 B2 JPH0415938 B2 JP H0415938B2 JP 55086801 A JP55086801 A JP 55086801A JP 8680180 A JP8680180 A JP 8680180A JP H0415938 B2 JPH0415938 B2 JP H0415938B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- silicon
- containing silicon
- intrinsic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 15
- 108091008695 photoreceptors Proteins 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 239000012212 insulator Substances 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 229910052738 indium Inorganic materials 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 7
- 230000003068 static effect Effects 0.000 description 26
- 230000005611 electricity Effects 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 239000004020 conductor Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910021617 Indium monochloride Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001443 photoexcitation Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum compound Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000711 cancerogenic effect Effects 0.000 description 1
- 231100000357 carcinogen Toxicity 0.000 description 1
- 231100000315 carcinogenic Toxicity 0.000 description 1
- 239000003183 carcinogenic agent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08235—Silicon-based comprising three or four silicon-based layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/0825—Silicon-based comprising five or six silicon-based layers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Priority Applications (20)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8680180A JPS5711351A (en) | 1980-06-25 | 1980-06-25 | Electrostatic copying machine |
| US06/276,503 US4418132A (en) | 1980-06-25 | 1981-06-23 | Member for electrostatic photocopying with Si3 N4-x (0<x<4) |
| US06/502,630 US4555462A (en) | 1980-06-25 | 1983-07-21 | Printing member for electrostatic photocopying |
| US06/594,292 US4600670A (en) | 1980-06-25 | 1984-03-23 | Printing member for electrostatic photocopying |
| US06/594,685 US4598031A (en) | 1980-06-25 | 1984-03-29 | Printing member for electrostatic photocopying |
| US06/594,686 US4587187A (en) | 1980-06-25 | 1984-03-29 | Printing member for electrostatic photocopying |
| US06/603,419 US4572881A (en) | 1980-06-25 | 1984-04-24 | Printing member for electrostatic photocopying |
| US06/731,495 US4582770A (en) | 1980-06-25 | 1985-05-07 | Printing member for electrostatic photocopying |
| US07/116,337 US4889783A (en) | 1980-06-25 | 1987-11-02 | Printing member for electrostatic photocopying |
| US07/335,708 US4889782A (en) | 1980-06-25 | 1989-04-10 | Electrostatic photocopying machine |
| US07/395,995 US4971872A (en) | 1980-06-25 | 1989-08-21 | Electrostatic photocopying machine |
| US07/444,307 US5008171A (en) | 1980-06-25 | 1989-12-01 | Printing member for electrostatic photocopying |
| US07/452,355 US4999270A (en) | 1980-06-25 | 1989-12-19 | Printing member for electrostatic photocopying |
| US07/577,006 US5070364A (en) | 1980-06-25 | 1990-09-04 | Printing member for electrostatic photocopying |
| US07/606,188 US5144367A (en) | 1980-06-25 | 1990-10-31 | Printing member for electrostatic photocopying |
| US07/606,183 US5103262A (en) | 1980-06-25 | 1990-10-31 | Printing member for electrostatic photocopying |
| US07/606,187 US5143808A (en) | 1980-06-25 | 1990-10-31 | Printing member for electrostatic photocopying |
| US08/046,839 US5303007A (en) | 1980-06-25 | 1993-04-14 | Printing apparatus for electrostatic photocopying |
| US08/149,550 US5465137A (en) | 1980-06-25 | 1993-11-09 | Printing member for electrostatic photocopying |
| US08/304,217 US5545503A (en) | 1980-06-25 | 1994-09-12 | Method of making printing member for electrostatic photocopying |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8680180A JPS5711351A (en) | 1980-06-25 | 1980-06-25 | Electrostatic copying machine |
Related Child Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56151147A Division JPS57122445A (en) | 1981-09-24 | 1981-09-24 | Copying machine |
| JP56151148A Division JPH0723962B2 (ja) | 1981-09-24 | 1981-09-24 | ドラム形感光体の作製方法 |
| JP13073884A Division JPS6017451A (ja) | 1984-06-25 | 1984-06-25 | 複写機の作製方法 |
| JP13073984A Division JPS6017452A (ja) | 1984-06-25 | 1984-06-25 | 複写機の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5711351A JPS5711351A (en) | 1982-01-21 |
| JPH0415938B2 true JPH0415938B2 (en]) | 1992-03-19 |
Family
ID=13896893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8680180A Granted JPS5711351A (en) | 1980-06-25 | 1980-06-25 | Electrostatic copying machine |
Country Status (2)
| Country | Link |
|---|---|
| US (7) | US4418132A (en]) |
| JP (1) | JPS5711351A (en]) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5545503A (en) * | 1980-06-25 | 1996-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of making printing member for electrostatic photocopying |
| US4999270A (en) * | 1980-06-25 | 1991-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5144367A (en) * | 1980-06-25 | 1992-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US4889783A (en) * | 1980-06-25 | 1989-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5103262A (en) * | 1980-06-25 | 1992-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5143808A (en) * | 1980-06-25 | 1992-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5070364A (en) * | 1980-06-25 | 1991-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| JPS58159842A (ja) * | 1982-03-17 | 1983-09-22 | Ricoh Co Ltd | 感光体の製造方法 |
| JPS59115574A (ja) | 1982-12-23 | 1984-07-04 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
| US5468653A (en) * | 1982-08-24 | 1995-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| USRE38727E1 (en) | 1982-08-24 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| JPS59111152A (ja) * | 1982-12-16 | 1984-06-27 | Sharp Corp | 電子写真用感光体 |
| JPS59184356A (ja) * | 1983-04-02 | 1984-10-19 | Canon Inc | 電子写真用光導電部材 |
| JPS6083957A (ja) * | 1983-10-13 | 1985-05-13 | Sharp Corp | 電子写真感光体 |
| US4544617A (en) * | 1983-11-02 | 1985-10-01 | Xerox Corporation | Electrophotographic devices containing overcoated amorphous silicon compositions |
| JPH067270B2 (ja) * | 1983-12-16 | 1994-01-26 | 株式会社日立製作所 | 電子写真用感光体 |
| US4727044A (en) | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
| JPS6017452A (ja) * | 1984-06-25 | 1985-01-29 | Shunpei Yamazaki | 複写機の作製方法 |
| JPS6123158A (ja) * | 1984-07-11 | 1986-01-31 | Stanley Electric Co Ltd | 電子写真用感光体 |
| JPS61221752A (ja) * | 1985-03-12 | 1986-10-02 | Sharp Corp | 電子写真感光体 |
| US4731314A (en) * | 1985-05-07 | 1988-03-15 | Semiconductor Energy Laboratory, Co., Ltd. | Printing member for electrostatic printing having a high crystallization region of an intrinsic semiconductor layer formed by irradiation with light and method of manufacturing thereof |
| JPH0789232B2 (ja) * | 1985-05-17 | 1995-09-27 | 株式会社リコー | 電子写真感光体 |
| US4701395A (en) * | 1985-05-20 | 1987-10-20 | Exxon Research And Engineering Company | Amorphous photoreceptor with high sensitivity to long wavelengths |
| US4721663A (en) * | 1985-08-26 | 1988-01-26 | Energy Conversion Devices, Inc. | Enhancement layer for negatively charged electrophotographic devices |
| US4713309A (en) * | 1985-08-26 | 1987-12-15 | Energy Conversion Devices, Inc. | Enhancement layer for positively charged electrophotographic devices and method for decreasing charge fatigue through the use of said layer |
| IN166164B (en]) * | 1985-08-26 | 1990-03-24 | Energy Conversion Devices Inc | |
| US4663258A (en) * | 1985-09-30 | 1987-05-05 | Xerox Corporation | Overcoated amorphous silicon imaging members |
| EP0241111B1 (en) * | 1986-02-05 | 1991-04-10 | Canon Kabushiki Kaisha | Light-receiving member for electrophotography |
| US4747992A (en) * | 1986-03-24 | 1988-05-31 | Sypula Donald S | Process for fabricating a belt |
| US4954397A (en) * | 1986-10-27 | 1990-09-04 | Canon Kabushiki Kaisha | Light receiving member having a divided-functionally structured light receiving layer having CGL and CTL for use in electrophotography |
| US4760005A (en) * | 1986-11-03 | 1988-07-26 | Xerox Corporation | Amorphous silicon imaging members with barrier layers |
| US5164281A (en) * | 1987-05-15 | 1992-11-17 | Sharp Kabushiki Kaisha | Photosensitive body for electrophotography containing amorphous silicon layers |
| JPS6418278A (en) * | 1987-07-14 | 1989-01-23 | Sharp Kk | Mis structure photosensor |
| US5225706A (en) * | 1987-12-04 | 1993-07-06 | Thomson-Csf | Matrix of photosensitive elements associating a photodiode or a phototransistor and a storage capacitor |
| CN1014650B (zh) * | 1987-12-14 | 1991-11-06 | 中国科学院上海硅酸盐研究所 | 具过渡层的光接受体及其制作方法 |
| US5262263A (en) * | 1989-01-31 | 1993-11-16 | Kyocera Corporation | Layer electrophotographic sensitive member comprising morphous silicon |
| EP0419288A3 (en) * | 1989-09-22 | 1991-08-21 | Kabushiki Kaisha Toshiba | Electrophotographic receptor |
| JPH09120173A (ja) * | 1996-08-10 | 1997-05-06 | Semiconductor Energy Lab Co Ltd | 感光体の作製方法 |
| US7361930B2 (en) * | 2005-03-21 | 2008-04-22 | Agilent Technologies, Inc. | Method for forming a multiple layer passivation film and a device incorporating the same |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3443938A (en) * | 1964-05-18 | 1969-05-13 | Xerox Corp | Frost imaging employing a deformable electrode |
| US3569763A (en) * | 1966-02-14 | 1971-03-09 | Tokyo Shibaura Electric Co | Multilayer photoconductive device having adjacent layers of different spectral response |
| US3801317A (en) * | 1966-10-28 | 1974-04-02 | Canon Camera Co | Electrophotographic plate |
| US3650737A (en) * | 1968-03-25 | 1972-03-21 | Ibm | Imaging method using photoconductive element having a protective coating |
| US3649116A (en) * | 1968-07-19 | 1972-03-14 | Owens Illinois Inc | Discontinuous electrode for electrophotography |
| JPS4925218B1 (en]) * | 1968-09-21 | 1974-06-28 | ||
| DE2056013B2 (de) * | 1969-11-14 | 1974-03-21 | Canon K.K., Tokio | Verfahren zur Herstellung einer fotoleitfähigen Schicht |
| JPS4926148B1 (en]) * | 1970-06-10 | 1974-07-06 | ||
| US4317844A (en) * | 1975-07-28 | 1982-03-02 | Rca Corporation | Semiconductor device having a body of amorphous silicon and method of making the same |
| DE2746967C2 (de) * | 1977-10-19 | 1981-09-24 | Siemens AG, 1000 Berlin und 8000 München | Elektrofotographische Aufzeichnungstrommel |
| US4265991A (en) * | 1977-12-22 | 1981-05-05 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and process for production thereof |
| US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
| JPS554040A (en) * | 1978-06-26 | 1980-01-12 | Hitachi Ltd | Photoconductive material |
| US4239554A (en) * | 1978-07-17 | 1980-12-16 | Shunpei Yamazaki | Semiconductor photoelectric conversion device |
| JPS5529154A (en) * | 1978-08-23 | 1980-03-01 | Shunpei Yamazaki | Semiconductor device |
| JPS5625743A (en) * | 1979-08-08 | 1981-03-12 | Matsushita Electric Ind Co Ltd | Electrophotographic receptor |
| JPS5664347A (en) * | 1979-10-30 | 1981-06-01 | Fuji Photo Film Co Ltd | Electrophotographic receptor |
| US4388482A (en) * | 1981-01-29 | 1983-06-14 | Yoshihiro Hamakawa | High-voltage photovoltaic cell having a heterojunction of amorphous semiconductor and amorphous silicon |
-
1980
- 1980-06-25 JP JP8680180A patent/JPS5711351A/ja active Granted
-
1981
- 1981-06-23 US US06/276,503 patent/US4418132A/en not_active Expired - Lifetime
-
1983
- 1983-07-21 US US06/502,630 patent/US4555462A/en not_active Expired - Lifetime
-
1984
- 1984-03-23 US US06/594,292 patent/US4600670A/en not_active Expired - Lifetime
- 1984-03-29 US US06/594,685 patent/US4598031A/en not_active Expired - Lifetime
- 1984-03-29 US US06/594,686 patent/US4587187A/en not_active Expired - Lifetime
- 1984-04-24 US US06/603,419 patent/US4572881A/en not_active Expired - Lifetime
-
1985
- 1985-05-07 US US06/731,495 patent/US4582770A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4572881A (en) | 1986-02-25 |
| US4598031A (en) | 1986-07-01 |
| JPS5711351A (en) | 1982-01-21 |
| US4600670A (en) | 1986-07-15 |
| US4587187A (en) | 1986-05-06 |
| US4555462A (en) | 1985-11-26 |
| US4582770A (en) | 1986-04-15 |
| US4418132A (en) | 1983-11-29 |
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